sot23 npn silicon planar small signal transistors issue 2 - june 1995 partmarking details ? bcw31 ? d1 bcw31r ? d4 bcw32 ? d2 BCW32R ? d5 bcw33 ? d3 bcw33r ? d6 complementary types ? bcw31 - bcw29 ? bcw32 - bcw30 ? bcw33 - n/a absolute maximum ratings. parameter symbol va l ue uni t collector-base voltage v cbo 32 v collector-emitter voltage v ceo 32 v emitter-base voltage v ebo 5v peak pulse current i cm 200 ma continuous collector current i c 100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. base - emitter voltage v be 550 700 mv i c =2ma, v ce = 5v collector-emitter saturation voltage v ce(sat) 120 210 250 mv mv i c =10ma, i b = 0.5ma i c =50ma, i b =2.5ma base-emitter saturation voltage v be(sat) 750 850 mv mv i c =10ma, i b =0.5ma i c =50ma, i b =2.5ma collector- base cut-off current i cbo 100 10 na m a i e =0, v cb =20v i e =0,v cb =20v,t j =100c static forward current transfer ratio bcw31 h fe 110 90 220 i c =10 m a, v ce =5v i c =2ma, v ce =5v bcw32 h fe 200 150 450 i c =10 m a, v ce =5v i c =2ma, v ce =5v bcw33 h fe 420 270 800 i c =10 m a, v ce =5v i c =2ma, v ce =5v transition frequency f t 300 mhz i c =10ma, v ce =5v f = 35mhz collector capacitance c tc 4pfi e =i e =0, v cb =10v f= 1mhz noise figure n 10 db i c = 200ma, v ce =5v r s =2k w , f=1khz b= 200hz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device bcw31 bcw32 bcw33 page no c b e
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